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MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 -- 3 September 2008 Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.
Table 1. Product overview Package NXP MMBZ12VDL MMBZ15VDL MMBZ18VCL MMBZ20VCL MMBZ27VCL MMBZ33VCL
[1] All types available as /DG halogen-free version.
Type number[1]
Configuration JEDEC TO-236AB dual common cathode
SOT23
1.2 Features
I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd 140 pF I Rated peak pulse power: PPPM 40 W I Ultra low leakage current: IRM 5 nA I ESD protection up to 30 kV (contact discharge) I IEC 61000-4-2; level 4 (ESD) I IEC 61643-321 I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Automotive electronic control units I Portable electronics
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Per diode VRWM reverse standoff voltage MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG Cd diode capacitance MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG f = 1 MHz; VR = 0 V 110 85 70 65 48 45 140 105 90 80 60 55 pF pF pF pF pF pF 8.5 12.8 14.5 17 22 26 V V V V V V Parameter Conditions Min Typ Max Unit
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description anode (diode 1) anode (diode 2) common cathode
1 2 3 3
Simplified outline
Graphic symbol
1
2
006aaa150
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
2 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
3. Ordering information
Table 4. Ordering information Package Name MMBZ12VDL MMBZ15VDL MMBZ18VCL MMBZ20VCL MMBZ27VCL MMBZ33VCL MMBZ12VDL/DG MMBZ15VDL/DG MMBZ18VCL/DG MMBZ20VCL/DG MMBZ27VCL/DG MMBZ33VCL/DG plastic surface-mounted package; 3 leads SOT23 Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 5. Marking codes Marking code[1] *MA *MB *MC *MD *ME *MF Type number MMBZ12VDL/DG MMBZ15VDL/DG MMBZ18VCL/DG MMBZ20VCL/DG MMBZ27VCL/DG MMBZ33VCL/DG Marking code[1] TJ* TL* TN* TQ* TS* TU* Type number MMBZ12VDL MMBZ15VDL MMBZ18VCL MMBZ20VCL MMBZ27VCL MMBZ33VCL
[1]
* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
3 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPPM IPPM rated peak pulse power rated peak pulse current MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG Per device Ptot Tj Tamb Tstg
[1] [2] [3] [4]
Parameter
Conditions tp = 10/1000 s tp = 10/1000 s
[1][2] [1][2]
Min -
Max 40 2.35 1.9 1.6 1.4 1 0.87
Unit W A A A A A A
total power dissipation junction temperature ambient temperature storage temperature
Tamb 25 C
[3] [4]
-55 -65
350 440 150 +150 +150
mW mW C C C
In accordance with IEC 61643-321 (10/1000 s current waveform). Measured from pin 1 or 2 to pin 3. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) machine model
[1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 or 2 to pin 3.
[1][2]
Parameter
Conditions
Min
Max
Unit
-
30 2
kV kV
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
4 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 8 kV
Table 8. Standard Per diode
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
001aaa631
150 IPP (%) 100 100 % IPP; 10 s
006aab319
IPP 100 % 90 %
50 % IPP; 1000 s 50
10 % tr = 0.7 ns to 1 ns 0 1.0 2.0 3.0 tp (ms) 4.0 30 ns 60 ns t
0
Fig 1.
10/1000 s pulse waveform according to IEC 61643-321
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Thermal characteristics
Table 9. Symbol Per device Rth(j-a) Rth(j-sp)
[1] [2] [3]
Thermal characteristics Parameter Conditions
[1] [2] [3]
Min -
Typ -
Max 350 280 60
Unit K/W K/W K/W
thermal resistance from junction in free air to ambient thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Soldering point at pin 3.
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
5 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per diode VF forward voltage MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG VRWM reverse standoff voltage MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG IRM reverse leakage current MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG VRWM = 8.5 V VRWM = 12.8 V VRWM = 14.5 V VRWM = 17 V VRWM = 22 V VRWM = 26 V 0.1 0.1 0.1 0.1 0.1 0.1 5 5 5 5 5 5 nA nA nA nA nA nA 8.5 12.8 14.5 17 22 26 V V V V V V IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 200 mA IF = 10 mA 0.9 0.9 0.9 0.9 1.1 0.9 V V V V V V Conditions Min Typ Max Unit
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
6 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Parameter VBR breakdown voltage MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG Cd diode capacitance MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG VCL clamping voltage MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG IPPM = 2.35 A IPPM = 1.9 A IPPM = 1.6 A IPPM = 1.4 A IPPM = 1 A IPPM = 0.87 A
[1][2]
Conditions IR = 1 mA
Min 11.4 14.3 17.1 19 25.65 31.35
Typ 12 15 18 20 27 33
Max 12.6 15.8 18.9 21 28.35 34.65
Unit V V V V V V
f = 1 MHz; VR = 0 V 110 85 70 65 48 45 140 105 90 80 60 55 pF pF pF pF pF pF
-
-
17 21.2 25 28 38 46
V V V V V V
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
7 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Parameter SZ MMBZ12VDL MMBZ12VDL/DG MMBZ15VDL MMBZ15VDL/DG MMBZ18VCL MMBZ18VCL/DG MMBZ20VCL MMBZ20VCL/DG MMBZ27VCL MMBZ27VCL/DG MMBZ33VCL MMBZ33VCL/DG
[1] [2] In accordance with IEC 61643-321 (10/1000 s current waveform). Measured from pin 1 or 2 to pin 3.
Conditions
Min -
Typ 8.1 11 14 15.8 23 29.4
Max -
Unit mV/K mV/K mV/K mV/K mV/K mV/K
temperature coefficient IZ = 1 mA
103 PPPM (W) 102
006aab327
1.2 PPPM PPPM(25C) 0.8
006aab321
10
0.4
1 10-2
10-1
1
10
102
103 tp (ms)
0 0 50 100 150 Tj (C) 200
MMBZ27VCL: unidirectional and bidirectional Tamb = 25 C
Fig 3.
Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as a function of junction temperature; typical values
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
8 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
100 Cd (pF) 80
006aab328
102 IRM (nA) 10
006aab329
60
1
40
(1) (2)
10-1
20
(3) (4)
10-2
0 0 5 10 15 20 25 VR (V)
10-3 -75
-25
25
75
125 175 Tamb (C)
f = 1 MHz; Tamb = 25 C (1) MMBZ15VDL: unidirectional (2) MMBZ15VDL: bidirectional (3) MMBZ27VCL: unidirectional (4) MMBZ27VCL: bidirectional
MMBZ27VCL: VRWM = 22 V
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
I
Fig 6.
Reverse leakage current as a function of junction temperature; typical values
IPPM IPP
-VCL -VBR -VRWM -IRM -IR - P-N
V -VCL -VBR -VRWM
IR IRM -IRM -IR VRWM VBR VCL
+ - +
-IPP -IPPM
006aab324
-IPP -IPPM
006aab325
Fig 7.
V-I characteristics for a unidirectional ESD protection diode
Fig 8.
V-I characteristics for a bidirectional ESD protection diode
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
9 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
8. Application information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The devices provide a surge capability of 40 W per line for a 10/1000 s waveform.
line 1 to be protected line 2 to be protected MMBZxVCL/VDL GND line 1 to be protected
MMBZxVCL/VDL GND
unidirectional protection of two lines
bidirectional protection of one line
006aab330
Fig 9.
Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the devices as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
10 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
10. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 10. Package outline SOT23 (TO-236AB)
11. Packing information
Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number MMBZ12VDL MMBZ15VDL MMBZ18VCL MMBZ20VCL MMBZ27VCL MMBZ33VCL MMBZ12VDL/DG MMBZ15VDL/DG MMBZ18VCL/DG MMBZ20VCL/DG MMBZ27VCL/DG MMBZ33VCL/DG
[1] For further information and the availability of packing methods, see Section 15.
Package SOT23
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
11 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
12. Soldering
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 11. Reflow soldering footprint SOT23 (TO-236AB)
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 12. Wave soldering footprint SOT23 (TO-236AB)
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
12 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
13. Revision history
Table 12. Revision history Release date Data sheet status Product data sheet Change notice Supersedes Document ID
MMBZXVCL_MMBZXVDL_SER_1 20080903
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
13 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
14. Legal information
14.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices -- These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer's own risk.
14.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
MMBZXVCL_MMBZXVDL_SER_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 3 September 2008
14 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
16. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application information. . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 September 2008 Document identifier: MMBZXVCL_MMBZXVDL_SER_1

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